SI2304DDS-T1-GE3
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SI2304DDS-T1-GE3 datasheet
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МаркировкаSI2304DDS-T1-GE3
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ПроизводительSiliconix
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ОписаниеVishay Intertechnology SI2304DDS-T1-GE3 Configuration: Single Continuous Drain Current: 3.6 A Continuous Drain Current Id: 3.6A Drain Source Voltage Vds: 30V Drain-source Breakdown Voltage: 30 V Gate Charge Qg: 4.5 nC ID_COMPONENTS: 2662053 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT On Resistance Rds(on): 60mohm Package / Case: TO-236 Power Dissipation: 1.7 W Power Dissipation Pd: 1.1W Resistance Drain-source Rds (on): 0.049 Ohms Threshold Voltage Vgs Typ: 2.2V Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.049 Ohms Part # Aliases: SI2304DDS-GE3
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Количество страниц7 шт.
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Форматы файлаHTML, PDF
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